Nanosecond switching of high power laser activated silicon switches
Abstract
Light activated multilayered silicon semiconductor devices have been used to switch at MW power levels with ns turnon time. Current rate of rise of 700 kA/ns at 10 kA, with 1 kV across the load have been achieved.
- Publication:
-
NASA STI/Recon Technical Report N
- Pub Date:
- November 1975
- Bibcode:
- 1975STIN...7627562Z
- Keywords:
-
- Beam Switching;
- Laser Applications;
- Silicon;
- Semiconductor Devices;
- Lasers and Masers