Increasing the operating speed of integrated circuits made of MOS transistors
Abstract
Integrated circuits which employ Bipolar transistors as opposed to metal oxide semiconductor (MOS) transistors, operate at a much higher speed. The cause for lower operating speeds of integrated circuits using MOS transistors are channel resistance and parasitic capacitance in the transistor, which results from gate metallization overlap of source and drain diffusion areas. Various methods are proposed to alter MOS transistor capacitances and resistances to improve operating speed. One technique, called ion alloying, is proposed, which can improve MOS transistor electrical properties. Another method is the fabrication of MOS circuits and transistors on dielectric substrates such as sapphire, spinel, and polycrystalline silicon. The use of charge coupled devices to increase the operating speed of MOS circuits is also examined.
- Publication:
-
NASA STI/Recon Technical Report N
- Pub Date:
- August 1975
- Bibcode:
- 1975STIN...7621415Z
- Keywords:
-
- Integrated Circuits;
- Metal Oxide Semiconductors;
- Transistors;
- Alloying;
- Circuit Reliability;
- Electrical Properties;
- Ion Implantation;
- Sapphire;
- Silicon;
- Spinel;
- Electronics and Electrical Engineering