Q-band bulk-effect microwave modulation by P-InSb
Abstract
When pulsed electric fields of up to over 1·5 × 104 V/m were applied to a p-type InSb rod in Q-band waveguide, the transmitted microwave power was observed to increase by over 8 dB, for a standing attenuation of 9·3 dB by the rod. The transmission increase is partially masked by microwave absorption by injected minority carriers. The transmission increase decays in more than one microsecond after the pulse ceases. The possible mechanisms giving rise to the effect are discussed.
- Publication:
-
Solid State Electronics
- Pub Date:
- November 1975
- DOI:
- 10.1016/0038-1101(75)90109-4
- Bibcode:
- 1975SSEle..18..943T
- Keywords:
-
- Indium Antimonides;
- Microwave Attenuation;
- P-Type Semiconductors;
- Pulse Modulation;
- Waveguides;
- Carrier Injection;
- Electric Pulses;
- Microwave Transmission;
- Minority Carriers;
- Time Response;
- Electronics and Electrical Engineering