Resonance effects observed at the onset of Fowler-Nordheim tunneling in thin MOS structures

Tunnel currents vs oxide voltage have been measured on thin (30-40 Å) oxides on heavily doped p-type silicon. At the onset of Fowler-Nordheim tunneling, oscillations in the current vs oxide field curve were observed. These oscillations show excellent agreement with resonances occuring in the triangular potential well defined by the top of the oxide conduction band and the oxide-silicon interface.