IMPATT oscillators with enhanced leakage current
Abstract
The behavior of IMPATT oscillators with enhanced leakage current has been experimentally evaluated by irradiating operating diodes with transient ionizing radiation. Leakage current was induced in diffused junction GaAs and silicon X-band IMPATT diodes by irradiation with 100 nsec pulses of 10 MeV electrons. With increasing leakage current, the oscillator RF power decreases and the frequency of oscillation increases. A large signal circuit model of the IMPATT diode is developed which correlates well with experimental measurements.
- Publication:
-
Solid State Electronics
- Pub Date:
- January 1975
- DOI:
- 10.1016/0038-1101(75)90066-0
- Bibcode:
- 1975SSEle..18....1C
- Keywords:
-
- Avalanche Diodes;
- Electric Power;
- Equivalent Circuits;
- Frequency Shift;
- Gallium Arsenides;
- Microwave Oscillators;
- Bias;
- Electromagnetic Measurement;
- Ion Impact;
- Irradiation;
- Junction Diodes;
- Performance Prediction;
- Performance Tests;
- Pulsed Radiation;
- Transit Time;
- Electronics and Electrical Engineering