Theory of core excitons in semiconductors
Abstract
A theoretical description of core excitons in semiconductors is given. The treatment is similar to that of isocoric impurities reported earlier. It is shown that the core exciton in silicon is valley—orbit split, unlike the indirect exciton formed during the excitation of valence-band electrons in that material. Numerical results are reported and general conclusions are drawn.
- Publication:
-
Solid State Communications
- Pub Date:
- January 1975
- DOI:
- 10.1016/0038-1098(75)90578-5
- Bibcode:
- 1975SSCom..16..217P