Small-signal theoretical analysis of Schottky barrier Baritt diodes

A theoretical analysis of the MSM Baritt diode is described. Analytical solutions are given for steady-state characteristics of both majority and minority electron injection. Transition from low-field region to high-field velocity-saturated region, from space-charge limited (SCL) regime to thermionic emission regime is taken into account. Thermionic emission is modified by image-force barrier lowering. Small-signal characteristics of SCL low-field region and thermionic emission high-field velocity saturated region for majority and minority electron injection are determined. Optimization of the absolute maximum value of the negative resistance and design of the device are made. The noise spectrum is calculated, assuming the presence of both injection noise and diffusion noise.