Defects in irradiated silicon: EPR of the tin-vacancy pair
Abstract
An EPR spectrum, labeled Si-G29, is identified as a lattice vacancy trapped by substitutional tin. The resulting tin-vacancy pair is observed in its neutral ground state with S=1. Studies versus wavelength of illumination indicate that it has a donor level at ~Ev+0.35 eV. Analysis of the EPR spectrum leads to a model in which the tin atom resides in a position halfway between two normal silicon atom sites (D3d). It is stable to ~500 K.
- Publication:
-
Physical Review B
- Pub Date:
- November 1975
- DOI:
- 10.1103/PhysRevB.12.4383
- Bibcode:
- 1975PhRvB..12.4383W