Complementary MOS transistors in micropower circuits
Abstract
Complementary MOS transistor (CMOST) circuits are analyzed to determine their ultimate obtainable performance, and fabrication techniques are developed that produce circuits with low power-speed product. The MOST is treated as a distributed nonlinear transmission line to investigate the detailed nature of its transient response. These methods are applied to the analysis of the switching performance of CMOST logic gates. A MOST model is developed that describes effects that become significant at small voltages and sizes. The standard strong inversion approximation is relaxed, and the two-dimensional nature of the fields in the MOST is included. When the MOST model is combined with the CMOST performance analysis, an absolute lower bound on CMOST power consumption, supply voltage, and switching time results. A method for adjusting MOST threshold voltage by ion implantation is described. A theory that predicts the threshold as a function of the implantation parameters is developed and compared to experimental measurements. Ion implantation was used to fabricate a CMOST ring oscillator.
- Publication:
-
Ph.D. Thesis
- Pub Date:
- December 1975
- Bibcode:
- 1975PhDT........72S
- Keywords:
-
- Metal Oxide Semiconductors;
- Microelectronics;
- Transistor Circuits;
- Energy Consumption;
- Gates (Circuits);
- Performance Prediction;
- Switching;
- Threshold Voltage;
- Transistor Logic;
- Electronics and Electrical Engineering