Hot Electron Effects in Mosfet's.

Expressions for the mobility that are consistent with recent experimental and theoretical evidence have been established and the I-V characteristic, the transconductance and noise in MOSFET's have been evaluated. The results show a decrease in the normalized saturation current as the gate voltage is increased, sharp onset of saturation, a decrease of the normalized saturation value of the drain voltage at which saturation occurs as the gate voltage is increased, and a saturation of the saturated transconductance of the device at high fields. These results are in agreement with recent experimental results. In evaluating the noise of the device it was found that the increase in the noise resistance of MOSFET's results from the drastic change in the transconductance due to the field dependence of the mobility and not as a result of an increase in electron temperature as was previously thought.