Technique for Separation of Carrier Densities and Mobilities in Highly Nondegenerate Multiband Semiconductors.
Abstract
The development of the conductivity coefficients was reviewed for highly degenerate metals, having an energy dependent relaxation time, and semiconductors, obeying Boltzmann statistics and having a relaxation time varying as the energy to the lambda power. In each case the energy bands are assumed to be spherical and parabolic. These two developments allow for band parameters to be determined even in the absence of magnetic fields sufficiently large as to have saturation of the Hall constant. Before applying this theory, one must consider the nature of real semiconducting materials. They rarely have completely quadratic or spherical energy bands, and over many temperature ranges they do not have powerlaw dependent relaxation times. These real situations require much more complicated and time consuming calculations, so much that one is usually forced to use simplifications.
 Publication:

Ph.D. Thesis
 Pub Date:
 December 1975
 Bibcode:
 1975PhDT........24R
 Keywords:

 Physics: Condensed Matter;
 Band Structure Of Solids;
 Carrier Mobility;
 Charge Carriers;
 Density (Number/Volume);
 Semiconductors (Materials);
 Conductivity;
 Energy Bands;
 Relaxation Time;
 SolidState Physics