Transistor structure relation to secondary breakdown and its effects
Abstract
The paper reviews transistor characteristics while operating in the secondary breakdown (SB) region. Series of experimental transistors of varying epitaxial collector structure were built and subjected to SB. The effects both visible and electrical, were investigated, summarized and related to the structure and to the electrical fields and carrier distribution in various operating conditions.
- Publication:
-
Microelectronics Reliability
- Pub Date:
- 1975
- Bibcode:
- 1975MiRe...14..451A
- Keywords:
-
- Bipolar Transistors;
- Component Reliability;
- Electrical Faults;
- Electron Avalanche;
- Junction Transistors;
- Volt-Ampere Characteristics;
- Current Distribution;
- Electric Fields;
- Electrical Resistivity;
- Epitaxy;
- Failure Modes;
- P-N-P Junctions;
- Silicon Transistors;
- Electronics and Electrical Engineering