Bipolar transistors and enriched MOS transistors - Some points of comparison
Abstract
Bipolar transistors and MOS transistors are compared on the basis of their speed performances in integrated logic circuits. The criteria, which are the basis of the comparison, are the transit time through the active zone, transconductance deduced from an analysis of modulating capacitance, the active voltage, and the input impedance.
- Publication:
-
L'Onde Electrique
- Pub Date:
- November 1975
- Bibcode:
- 1975LOEle..55..491L
- Keywords:
-
- Bipolar Transistors;
- Dynamic Characteristics;
- Integrated Circuits;
- Logic Circuits;
- Metal Oxide Semiconductors;
- Transistor Circuits;
- Capacitance;
- Electrical Impedance;
- Electrical Properties;
- Quality Control;
- Semiconductor Devices;
- Transient Response;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering