SemiEmpirical Calculation of Depletion Region Width in n^{+}p Silicon Solar Cells
Abstract
An extension of the width calculation for impurity distributions of complementary error function and the Gaussian function, in addition to the exponential function is used in combination with experimental width values deduced from capacitance measurements at zero bias to numerically determine the width occurring in both the n+ and p junctions. The total possible error o the semiempirical calculation is less than plus or minus 3%. Results show considerable variation in the depletion widths occurring in the n+ and p regions for different impurity profiles.
 Publication:

Journal of the Electrochemical Society
 Pub Date:
 November 1975
 DOI:
 10.1149/1.2134066
 Bibcode:
 1975JElS..122.1562W
 Keywords:

 Error Functions;
 Gauss Equation;
 Impurities;
 PN Junctions;
 Solar Cells;
 Capacitance;
 Electrical Resistivity;
 Exponential Functions;
 Tables (Data);
 SolidState Physics