General review of ultra high-frequency and high-speed GaAs devices
Abstract
Systematic studies related to a use of GaAs devices in millimeter-wave frequency converter and multiplier applications were conducted since 1965. The results of these investigations are discussed, taking into account millimeter-wave nonlinear diodes, GaAs field effect transistors, Gunn effect digital devices, the GaAs IMPATT diode, aspects of GaAs epitaxial growth, and studies related to a use of the ion implantation technique.
- Publication:
-
Electronics Communications of Japan
- Pub Date:
- December 1975
- Bibcode:
- 1975JElCo..23.1159S
- Keywords:
-
- Gallium Arsenides;
- Integrated Circuits;
- Microwave Circuits;
- Millimeter Waves;
- Semiconductor Devices;
- Ultrahigh Frequencies;
- Avalanche Diodes;
- Epitaxy;
- Field Effect Transistors;
- Frequency Converters;
- Frequency Multipliers;
- Gunn Diodes;
- High Speed;
- Ion Implantation;
- Technology Assessment;
- Electronics and Electrical Engineering