Dynamic characteristics of inhomogeneous semiconductor structures
Abstract
The frequency characteristics of inhomogeneous dielectric (with traps) and semiconductor structures are studied and the electrophysical properties of silicon p-i-n nuclear radiation detectors are examined. Also considered are the volt-ampere, volt-capacitance, mobility and breakdown characteristics of high-power microwave silicon p-i-n diodes fabricated using epitaxy and diffusion technology and the effect of inhomogeneities on the distribution of current density in p-n-p-n structures. Individual items are announced in this issue.
- Publication:
-
Tashkent Izdatel Fan
- Pub Date:
- 1975
- Bibcode:
- 1975IzTas.........A
- Keywords:
-
- Dynamic Characteristics;
- Junction Diodes;
- Radiation Detectors;
- Semiconductor Junctions;
- Current Density;
- Dielectrics;
- Fabrication;
- Frequency Response;
- Inhomogeneity;
- P-I-N Junctions;
- P-N-P-N Junctions;
- Silicon;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering