Analysis of the parameters of a symmetrical domain in GaAs Gunn diodes with allowance for the field dependence of the electron diffusion coefficient - NASA/ADS

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NASA/ADS

Analysis of the parameters of a symmetrical domain in GaAs Gunn diodes with allowance for the field dependence of the electron diffusion coefficient

Publication:

Izvestiya Akademiya Nauk Armyanskoi

Pub Date:

1975

Bibcode:

1975IzArm..10..283A

Keywords:

Diffusion Coefficient;
Electron Diffusion;
Gallium Arsenides;
Gunn Diodes;
Domains;
Field Theory (Physics);
Symmetry;
Electronics and Electrical Engineering