Radiation effects on bipolar Integrated Injection Logic
Abstract
Integrated Injection Logic (I-squared L) is a new high-density, low power bipolar LSI technology that offers major performance advantages over other bipolar and MOS/LSI technologies. Results are presented on the experimentally-determined radiation susceptibility of developmental unhardened I-squared L LSI logic cells in terms of neutron-induced displacement damage, ionizing-dose-induced surface effects and transient photo-response.
- Publication:
-
IEEE Transactions on Nuclear Science
- Pub Date:
- December 1975
- DOI:
- 10.1109/TNS.1975.4328176
- Bibcode:
- 1975ITNS...22.2605R
- Keywords:
-
- Bipolar Transistors;
- Large Scale Integration;
- Logic Circuits;
- Metal Oxide Semiconductors;
- Radiation Effects;
- Inverters;
- Logical Elements;
- Radiation Damage;
- Surface Reactions;
- Transient Response;
- Electronics and Electrical Engineering