Transient response of MOS capacitors to high-energy electron irradiation
Abstract
A study is conducted of the transient conductivity of Al-SiO2-Si (n-type) MOS capacitors exposed to pulsed 30-MeV electron radiation. Capacitors under positive and negative bias are considered. It is found that, at least for moderate dose rates, charge transfer processes across the depletion region of the silicon provide a source of transient signal which is appreciably larger than that due to carrier generation in the oxide.
- Publication:
-
IEEE Transactions on Nuclear Science
- Pub Date:
- December 1975
- DOI:
- 10.1109/TNS.1975.4328160
- Bibcode:
- 1975ITNS...22.2516S
- Keywords:
-
- Capacitors;
- High Energy Electrons;
- Metal Oxide Semiconductors;
- Radiation Effects;
- Transient Response;
- Bias;
- Charge Transfer;
- Electrical Resistivity;
- Electron Irradiation;
- N-Type Semiconductors;
- Electronics and Electrical Engineering