Transistor collector breakdown in the presence of conducted EMP and gamma radiation
Abstract
In this paper we develop expressions which describe breakdown, negative resistance and latch characteristics for a common emitter transistor when exposed to simultaneous conducted EMP and ionizing radiation. These expressions are derived from a modified Ebers-Moll model and show that common emitter breakdown voltage is reduced, latch (or sustaining voltage) remains unchanged, and that the negative resistance characteristics are changed. Using the modified Ebers-Moll model good agreement between predicted and observed circuit response is demonstrated when the circuits are exposed to a rising collector voltage (due to EMP) and simultaneous ionizing (gamma) radiation.
- Publication:
-
IEEE Transactions on Nuclear Science
- Pub Date:
- December 1975
- DOI:
- 10.1109/TNS.1975.4328157
- Bibcode:
- 1975ITNS...22.2500R
- Keywords:
-
- Electromagnetic Pulses;
- Gamma Rays;
- Radiation Effects;
- Transistor Circuits;
- X Ray Irradiation;
- Accumulators;
- Avalanche Diodes;
- Computer Techniques;
- Dynamic Characteristics;
- Electrical Resistance;
- Transient Response;
- Electronics and Electrical Engineering