Displacement damage and radiation effects in boron implanted sapphire
Abstract
Optical absorption, thermal annealing and X-irradiation studies are reported on samples of boron implanted sapphire. The measurements indicate that implantation produces displacement damage in the sapphire with associated optical absorption bands at 2600 A and 2050 A as well as causing a displacement of the fundamental absorption edge to lower energies. The displacement damage can be thermally annealed with major stages at about 375 C and 850 C. X-irradiation to a dose of circa 10,000,000 rads (Si) after a partial thermal anneal does not change the magnitude of any absorption band or introduce new bands. The implications of the observed behavior for boron implanted MOSOS devices is discussed.
- Publication:
-
IEEE Transactions on Nuclear Science
- Pub Date:
- December 1975
- DOI:
- 10.1109/TNS.1975.4328114
- Bibcode:
- 1975ITNS...22.2250R
- Keywords:
-
- Ion Implantation;
- Metal Oxide Semiconductors;
- Radiation Damage;
- Sapphire;
- Absorption Spectra;
- Annealing;
- Boron;
- Radiation Dosage;
- Radiation Effects;
- Temperature Effects;
- Solid-State Physics