Thermal carrier generation in charge-coupled devices

A model for thermal carrier generation inside a single shift-register bit is used to construct the theoretical response curves for two practical modes of operation where the contribution from the generation of carriers can be substantial. Experiments are presented which confirm all aspects of the theoretical response curves, including the presence of an initial period of reduced generation in one of the two modes. It is shown that the buildup of generated carriers appearing at a charge-coupled device (CCD) output depends on the relative sizes between the constantly decreasing bulk generation under the signal-carrying electrode in one bit and the lateral current component resulting from generation under the other electrodes in the same bit. Procedures for determining generation parameters directly from observed CCD characteristics are described and implemented.