An EBS /electron bombarded semiconductor/ high-current pulse amplifier

An EBS (electron bombarded semiconductor) pulse amplifier which generates high-current fast-risetime variable-width pulses into low impedance loads is described. Current pulses of 100 A into a 1-ohm load have been obtained with a risetime of 2.2 msec. A di/dt of 40,000 A/microsec and a dV/dt of 71,000 V/microsec have been obtained. Pulse lengths to 1 microsec at 0.1-percent duty have been achieved. The risetime and peak current capabilities are presently limited by internal circuit parasitics. Without parasitics, the theoretical peak output capabilities for this EBS are 340 A with a di/dt of 600,000 A/microsec.