Functional operations of a high-resistivity n-GaAs diode by trap-controlled domain movement
Abstract
Since a traveling high-field domain in a high-resistivity n-GaAs diode is composed of charges by trapped carriers, it does not easily dissappear even after the external conditions to generate it are removed. By using this property of the domain, the diode is operated as a memory device.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- June 1975
- DOI:
- 10.1109/T-ED.1975.18138
- Bibcode:
- 1975ITED...22..355T
- Keywords:
-
- Charge Carriers;
- Diodes;
- Electrical Resistivity;
- Gallium Arsenides;
- N-Type Semiconductors;
- Trapped Particles;
- Gunn Diodes;
- Photoionization;
- Space Charge;
- Volt-Ampere Characteristics;
- Waveforms;
- Electronics and Electrical Engineering