A comprehensive model for Q switching in semiconductor lasers
Abstract
By combining a carrier concentration-dependent loss term with our earlier time-dependent saturable absorption loss term we have produced a comprehensive theory for Q switching which successfully accounts for the results so far reported. The concentration-dependent loss term shows a superlinear dependence with current due to the decrease of real guiding at the p-n junction. This increase in loss, however, reaches a maximum and shows a slight decrease at higher concentrations due to the onset of weak imaginary guiding.
- Publication:
-
IEEE Journal of Quantum Electronics
- Pub Date:
- July 1975
- DOI:
- 10.1109/JQE.1975.1068629
- Bibcode:
- 1975IJQE...11..528T
- Keywords:
-
- Mathematical Models;
- Nonlinear Optics;
- Q Switched Lasers;
- Semiconductor Lasers;
- Time Lag;
- Energy Absorption;
- Gallium Arsenide Lasers;
- Optical Waveguides;
- Temperature Effects;
- Threshold Currents;
- Time Dependence;
- Transient Response;
- Lasers and Masers