Oxygen-implanted double-heterojunction GaAs/GaAlAs injection lasers
Abstract
We describe a new process for stripe formation in double-heterostructure GaAs/GaAlAs injection lasers. This process, which uses oxygen-ion implantation to form the stripe through a chemical doping effect, has several advantages over alternative methods, both with respect to device processing and device properties and has produced high yields of CW room-temperature lasers. We present the details of the device structure and fabrication processes. The results of annealing studies, optical measurements, and lifetesting are described.
- Publication:
-
IEEE Journal of Quantum Electronics
- Pub Date:
- July 1975
- DOI:
- 10.1109/JQE.1975.1068675
- Bibcode:
- 1975IJQE...11..413B
- Keywords:
-
- Continuous Wave Lasers;
- Gallium Arsenide Lasers;
- Injection Lasers;
- Ion Implantation;
- Oxygen Ions;
- Room Temperature;
- Additives;
- Aluminum Compounds;
- Annealing;
- Backscattering;
- Chemical Effects;
- Fabrication;
- Optical Measurement;
- Service Life;
- Lasers and Masers