Internal optical losses in very thin CW heterojunction laser diodes
Abstract
Theoretical calculations are presented showing the relationship between the internal laser absorption and structural parameters appropriate for CW room-temperature lasers. These diodes have submicron-thick recombination regions, and very small spacings between the heat sink and the recombination region to minimize the thermal resistance. The optical loss is shown to be strongly dependent on the degree of radiation confinement to the active region. In particular, absorption in the surface GaAs layer providing the ohmic contact becomes very significant when the intermediate (AlGa)As layer is reduced below about 1 micron. It is further shown that excessive penetration into the GaAs regions gives rise to anomalies in the far-field radiation profiles in the direction perpendicular to the junction plane.
- Publication:
-
IEEE Journal of Quantum Electronics
- Pub Date:
- July 1975
- DOI:
- 10.1109/JQE.1975.1068646
- Bibcode:
- 1975IJQE...11..402B
- Keywords:
-
- Continuous Wave Lasers;
- Electromagnetic Absorption;
- Gallium Arsenides;
- Junction Diodes;
- Semiconductor Lasers;
- Energy Dissipation;
- Far Fields;
- Heat Sinks;
- Near Fields;
- Power Gain;
- Room Temperature;
- Thermal Resistance;
- Lasers and Masers