Near-field emission from GaAs double-heterostructure laser mirrors
Abstract
The near fields of double-heterostructure laser mirrors are studied in photoluminescent (PL) excitation and in lasing emission. The various liquid-phase epitaxial (LPE) layers of the laser diode are optically delineated in a wavelength-selective PL detection system. The near fields of the transverse lasing modes are correlated with the LPE layers that constitute the optical waveguide. It is found that small changes in refractive index within the waveguide have a pronounced effect on the distribution of the stimulated power within the LPE layers.
- Publication:
-
IEEE Journal of Quantum Electronics
- Pub Date:
- April 1975
- DOI:
- 10.1109/JQE.1975.1068589
- Bibcode:
- 1975IJQE...11..149H
- Keywords:
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- Gallium Arsenide Lasers;
- Laser Outputs;
- Near Fields;
- Optical Waveguides;
- Semiconductor Junctions;
- Laser Modes;
- Mirrors;
- P-N-P-N Junctions;
- Photoluminescence;
- Radiation Distribution;
- Lasers and Masers