Effect of heavier doped junction side on efficiency of Si IMPATT diodes
Abstract
- Publication:
-
IEEE Proceedings
- Pub Date:
- November 1975
- Bibcode:
- 1975IEEEP..63.1615V
- Keywords:
-
- Additives;
- Avalanche Diodes;
- Electric Fields;
- Power Efficiency;
- Silicon Junctions;
- Electron Avalanche;
- Holes (Electron Deficiencies);
- Ion Impact;
- Junction Diodes;
- Negative Resistance Devices;
- P-N Junctions;
- Pair Production;
- Transit Time;
- Electronics and Electrical Engineering