Optimum Schottky-barrier height for high-efficiency microwave transferred-electron diodes
Abstract
Optimum Schottky-barrier heights are given to make high-efficiency GaAs and InP transferred-electron diodes by injecting electrons directly into the upper valley from cathode contact.
- Publication:
-
IEEE Proceedings
- Pub Date:
- May 1975
- Bibcode:
- 1975IEEEP..63..823H
- Keywords:
-
- Energy Conversion Efficiency;
- Gallium Arsenides;
- Gunn Diodes;
- Indium Phosphides;
- Schottky Diodes;
- Barrier Layers;
- Carrier Injection;
- Electron Transfer;
- Negative Resistance Devices;
- Optimization;
- Thermionic Emission;
- Threshold Currents;
- Work Functions;
- Electronics and Electrical Engineering