The effect of soldering-in conditions on the structure of the ohmic contacts to gallium arsenide
Abstract
The secondary ion-ion emission method is used to study the distribution of elements in thin-film Ni and eutectic Au-Ge contacts on gallium arsenide under various regimes of soldering-in. X-ray analysis and electron microscopy are used to investigate the phase composition and the structure of the film before and after soldering-in. It is shown that there is a dependence between the distribution of elements and the electrical resistance in the film contact.
- Publication:
-
Fizika
- Pub Date:
- 1975
- Bibcode:
- 1975Fiz....18...42B
- Keywords:
-
- Contact Resistance;
- Electric Contacts;
- Gallium Arsenides;
- Metal Films;
- Soldering;
- Thin Films;
- Germanium Alloys;
- Gold Alloys;
- Ion Emission;
- Nickel Alloys;
- Solid-State Physics