The effect of soldering-in conditions on the structure of the ohmic contacts to gallium arsenide

The secondary ion-ion emission method is used to study the distribution of elements in thin-film Ni and eutectic Au-Ge contacts on gallium arsenide under various regimes of soldering-in. X-ray analysis and electron microscopy are used to investigate the phase composition and the structure of the film before and after soldering-in. It is shown that there is a dependence between the distribution of elements and the electrical resistance in the film contact.