Properties of microwave field-effect transistors

The physical phenomena occurring in metal-semiconductor field-effect transistors and in double-diffused MOS transistors (both of which are characterized by very short channel (below 3 microns)) are examined, along with the principles of operation of microwave junction-gate field-effect transistors and microwave insulated-gate field-effect transistors. The thermal noise characteristics and small-signal parameters of microwave field-effect transistors are discussed.