Ideal ohmic contacts to InP
Abstract
A new method of producing ohmic contacts to semiconducting n-type InP by the use of a slow alloying cycle with a P over-pressure has resulted in improved contact fabrication. Gunn devices were produced with these contacts for the anode and cathode and their microwave characteristics were measured.
- Publication:
-
Electronics Letters
- Pub Date:
- December 1975
- Bibcode:
- 1975ElL....11..621A
- Keywords:
-
- Electric Contacts;
- Indium Phosphides;
- Microwave Equipment;
- N-Type Semiconductors;
- Solid State Devices;
- Alloying;
- Epitaxy;
- Gunn Effect;
- Overpressure;
- Thin Films;
- Electronics and Electrical Engineering