Experiments on integrated gallium-arsenide f.e.t. oscillators at X band
Abstract
Experimental results obtained with GaAs f.e.t. oscillators at X band are described. It is demonstrated that the output power of f.e.t. oscillators is sufficient to drive X band mixers. The noise measure of these oscillators is competitive with Gunn devices, and can be reduced further.
- Publication:
-
Electronics Letters
- Pub Date:
- May 1975
- DOI:
- 10.1049/el:19750167
- Bibcode:
- 1975ElL....11..219P
- Keywords:
-
- Field Effect Transistors;
- Gallium Arsenides;
- Integrated Circuits;
- Microwave Oscillators;
- Power Efficiency;
- Electromagnetic Noise Measurement;
- Frequency Response;
- Mixing Circuits;
- Noise Spectra;
- Signal Mixing;
- Superhigh Frequencies;
- Electronics and Electrical Engineering