Threshold voltage shift of p-channel MOS-transistors by implantation of donors
Abstract
If the number of electrically activated donors after implantation and annealing is (10 min at 500° C) determined by Hall-measurements and if these values are used to compute the threshold voltage shift of P+ and As+-implanted p-channel MOS-transistors, calculation and experiment do not agree. The difference can be explained by considering that deep levels are created by ion implantation.
- Publication:
-
Applied Physics
- Pub Date:
- September 1975
- DOI:
- 10.1007/BF00883668
- Bibcode:
- 1975ApPhy...8...43R
- Keywords:
-
- Field Effect Transistors;
- Ion Implantation;
- Metal Oxide Semiconductors;
- Threshold Voltage;
- Volt-Ampere Characteristics;
- Capacitance;
- Donor Materials;
- Electric Potential;
- P-Type Semiconductors;
- Thresholds;
- Electronics and Electrical Engineering;
- Index Headings Ion implantation - MOS structure - Threshold voltage shiftC(V) characteristics