Recrystallization processes in polycrystalline silicon
Abstract
Recrystallization processes in polycrystalline silicon made by a chemical vapor deposition technique have been investigated. Primary recrystallization has been observed between 1150 and 1250 °C, secondary recrystallization occurred above 1350 °C. By this procedure, grains of about 100 μm have been obtained. Recrystallized silicon can in principle be used as a substrate for making relatively inexpensive solar cells.
- Publication:
-
Applied Physics Letters
- Pub Date:
- May 1975
- DOI:
- 10.1063/1.87995
- Bibcode:
- 1975ApPhL..26..569O
- Keywords:
-
- Heat Treatment;
- Polycrystals;
- Recrystallization;
- Silicon;
- Vapor Deposition;
- Cost Reduction;
- Fabrication;
- Single Crystals;
- Solar Cells;
- Substrates;
- Temperature Effects;
- Solid-State Physics;
- 81.20.Dt;
- 84.60.Jt;
- Photoelectric conversion: solar cells and arrays