Surface passivation studies on PbSnTe diode infrared detectors
Abstract
The development of diffused junction PbSnTe has resulted in high performance, high impedance detectors in the 8- to 14-micrometer region. However, this accomplishment is restricted by the lack of uniformity of resistance from element to element for detector arrays. The objectives of this program were to identify the leakage mechanism responsible for low resistance, minimize its effect on detector array performance, and passivate the surface of the device.
- Publication:
-
Final Technical Report Texas Instruments
- Pub Date:
- December 1974
- Bibcode:
- 1974ti...rept.....W
- Keywords:
-
- Diodes;
- Infrared Detectors;
- Passivity;
- Semiconductor Devices;
- Mis (Semiconductors);
- Surface Finishing;
- Surface Properties;
- Tellurides;
- Instrumentation and Photography