Microwave frequency memory using GaAs transferred-electron devices
Abstract
An investigation was made of the behavior of a transferred-electron device (TED) in a multimode resonant microwave cavity, to design such cavity and TED to optimize the number of allowed memory states in a given overall bandwidth, and to initiate a theoretical and experimental study leading toward development of a compact multimode cavity structure suitable for ECM frequency memory applications above 8 GHz. The study includes but is not limited to microstrip resonators. TE memorizers were designed and constructed using coaxial, waveguide, and alumina microstrip circuits. Operation between 10.34 and 12.46 GHz with 17 states spaced about 132 MHz apart was demonstrated with a 2-in. x 2-in. x 0.025-in. alumina circuit. A 5-foot waveguide circuit has operated between 9.75 and 10.82 GHz with 16 states spaced about 71 MHz apart, as was a 7-foot coaxial circuit between 11.0 and 11.77 GHz with 18 states spaced about 45 MHz apart. Switching between states has been achieved with pulsed rf input signals as short as 0.1 microsec.
- Publication:
-
Interim Report
- Pub Date:
- December 1974
- Bibcode:
- 1974rca..rept.....C
- Keywords:
-
- Gallium Arsenides;
- Microwave Switching;
- Registers (Computers);
- Computer Storage Devices;
- Gunn Diodes;
- Microstrip Devices;
- Strip Transmission Lines;
- Electronics and Electrical Engineering