A Ka band avalanche diode up-converter
Abstract
Recent experimental and theoretical results on a silicon avalanche diode up-converter are reported. A simplified theoretical analysis is developed in order to design the semiconductor device. Based upon the somewhat idealized Read model, this theory explains the main parametric effect used for frequency conversion. Experimental circuits were built and have allowed to obtain a good agreement between experimental and theoretical results. Up-conversion is achieved with a maximum output power of 23 dBm and about 0-dB conversion loss. The DC bias, intermediate frequency power and transponded frequency dependence are studied.
- Publication:
-
4th European Microwave Conference
- Pub Date:
- 1974
- Bibcode:
- 1974eumw.conf..459V
- Keywords:
-
- Avalanche Diodes;
- Extremely High Frequencies;
- Microwave Circuits;
- Network Synthesis;
- Parametric Frequency Converters;
- Silicon Junctions;
- Bias;
- Electronic Equipment Tests;
- Intermediate Frequencies;
- Millimeter Waves;
- P-N Junctions;
- Power Efficiency;
- Transponders;
- Electronics and Electrical Engineering