Effects of tunneling on high efficiency IMPATT avalanche diodes
Abstract
We study theoretically and experimentally the effect of a tunnel injection on high efficiency IMPATT avalanche diodes characterized by high low or low high low doping profile. Taking into account effects of tunneling some characteristics usually observed of such high efficiency IMPATT oscillator are explained. Then some criteria are deduced to select the best doping profile in order to obtain high efficiency in the centimeter wave region.
- Publication:
-
4th European Microwave Conference
- Pub Date:
- 1974
- Bibcode:
- 1974eumw.conf..454C
- Keywords:
-
- Avalanche Diodes;
- Electron Tunneling;
- Microwave Oscillators;
- Power Efficiency;
- Volt-Ampere Characteristics;
- Additives;
- Epitaxy;
- Ion Impact;
- Optimization;
- Performance Prediction;
- Superhigh Frequencies;
- Transit Time;
- Electronics and Electrical Engineering