A 12 volt X-band avalanche diode
Abstract
An avalanche diode is described which generates power of the order of one watt in X-band at efficiencies from 20 to 50% from a bias voltage as low as 12 V. The drift region is used twice in each cycle, and there are two avalanche zones, one on each side of the drift space. Silicon devices should be able to deliver up to 2 watts of CW power in X-band at up to 40% efficiency. Heterojunction devices fabricated with the avalanche zones of germanium and the rest of the diode in gallium arsenide should be about 25% efficient at 100 mA bias.
- Publication:
-
4th European Microwave Conference
- Pub Date:
- 1974
- Bibcode:
- 1974eumw.conf..439C
- Keywords:
-
- Avalanche Diodes;
- Continuous Radiation;
- Energy Conversion Efficiency;
- Microwave Oscillators;
- Power Efficiency;
- Silicon Junctions;
- Fabrication;
- Gallium Arsenides;
- Germanium;
- Junction Diodes;
- Negative Resistance Devices;
- Superhigh Frequencies;
- Waveforms;
- Electronics and Electrical Engineering