Gunn and IMPATT amplifiers for communications systems
Abstract
This paper discusses the use of negative resistance Gunn and IMPATT diodes in amplifier circuits. The operation of these diodes, their characteristics, design and circuits using them, and performance of these circuits is presented. The performance characteristics of these amplifiers pertinent to their use in frequency and phase modulated communications systems is discussed. Topics of discussion include: power output, gain, bandwidth, noise, phase linearity, AM to PM conversion, and intermodulation products.
- Publication:
-
4th European Microwave Conference
- Pub Date:
- 1974
- Bibcode:
- 1974eumw.conf..252B
- Keywords:
-
- Amplifier Design;
- Avalanche Diodes;
- Communication Equipment;
- Gunn Diodes;
- Microwave Amplifiers;
- Negative Resistance Devices;
- Amplitude Modulation;
- Bandwidth;
- Intermodulation;
- Performance Prediction;
- Phase Modulation;
- Phase Shift;
- Power Gain;
- Tuning;
- Electronics and Electrical Engineering