Effect of the silica growth mode on the mechanisms of damage by ionizing radiation in MOS structures

The study concerns the influence of some of the technological parameters involved in the MOS process on the radiation sensitivity of MOS capacitors. The parameters considered are: (1) the nature of the metallic electrode, and (2) the water content of the oxide film. The influence of thermal post-oxydation treatments is also discussed. The results obtained show that, in the case of wet oxides which have not had post-oxydation treatments, the extent of the degradation effect is controlled by the conditions of humidity under which the oxide is obtained and by the chemical reactivity of the metallic electrode. The role of ionic phenomena in these experiments is discussed.