Low-noise microwave amplification using transferred-electron and BARITT devices

The small signal amplifying properties of both GaAs and InP transferred electron devices and of Si BARITT (barrier injection transit time diode) devices are considered using simple physical models. InP is predicted theoretically to be capable of providing devices having the lowest noise measure. The paper shows that, for transferred-electron amplifiers, an optimum value of nl product exists for lowest noise measure.