MIS-tunneling with thickness-quantized electronic states in the semiconductor electrode

The basic aspects of quantum tunneling in solids are examined, taking into account the tunneling characteristics in the case of Al-Al2O3-SnTe-diodes. Questions regarding the quantum size effect are investigated and details concerning the band structure and the Fermi surface of tin telluride are studied. Experimental investigations reported are concerned with the energy sub-bands which are present in two-dimensional crystal structures. A tunnel-spectroscopic approach was used to determine the distances of the sub-bands. This approach made it possible to demonstrate for the first time the existence of thickness quantization for semiconductors. The preparation of the SnTe-Al2O3-Al tunnel diodes used in the experiments is discussed along with the test results and the principle of measurement.