Theoretical and experimental studies of the tuning and modulation properties of transferred-electron devices
The device performance under two basic tuning methods was examined, namely, tuning through the bias voltage of the device and tuning through a resonant circuit. The tuning properties were derived from the interaction between the device and the circuit. Two conventional cavity circuits which were employed, namely, the post-mount waveguide cavity and the slug-tuned coaxial-line cavity, had already been modeled and well understood. The present study is therefore concentrated on the nonlinear properties of the transferred-electron device. To accomplish this objective the device is modeled and its operation is analyzed. A one dimensional model is developed to simulate the space charge dynamical behavior in the device. The space charge behavior is determined by the doping profile in the active region, the diffusion coefficient, the drift velocity of the carrier and the terminal voltage.
- Pub Date:
- Charge Carriers;
- Diffusion Coefficient;
- Space Charge;
- Electronics and Electrical Engineering