Contribution to the study of the effect of deep-lying centers in Schottky diodes and silicon p-n junctions
Abstract
The present work deals with the study of the characteristics of Schottky diodes including deep-lying doped centers and phenomena pertaining to conduction, background noise, hysteresis, and memory effect with a view to finding an adequate interpretation of these phenomena. A hypothesis for the existence of an interfacial layer filled with deep-lying traps is set forth. Nondestructive electrical techniques are proposed for characterizing deep-lying centers in a semiconductor. The experimental results presented reveal the capacity and limitations of the proposed electrical techniques in characterizing the junctions under study.
- Publication:
-
Ph.D. Thesis
- Pub Date:
- 1974
- Bibcode:
- 1974PhDT.........9E
- Keywords:
-
- P-N Junctions;
- Schottky Diodes;
- Semiconductor Devices;
- Silicon Junctions;
- Additives;
- Background Noise;
- Capacitance;
- Current Density;
- Error Analysis;
- Graphs (Charts);
- Hall Effect;
- Hysteresis;
- Polarization (Charge Separation);
- Trapped Particles;
- Electronics and Electrical Engineering