1/f noise as a twoparameter stochastic process
Abstract
The power spectrum of the 'flicker noise', produced by the fluctuations of the electrical conductivity in semiconductors, thin discontinuous metal films, etc., is calculated by means of a twoparameter model. The calculations take into account that the electrical conductivity is modulated by a trapping process, using the vacancy time and the trap occupancy time as stochastic variables. By means of Machlup's (1954) expression for the power spectrum of a twoparameter process, a new power spectrum formula is obtained under the assumption that the traps have a constant distribution law between limiting energies. The same formula for the noise power spectrum holds even if traps have a definite energy, but access of electrons is by tunnelling, and the widths of the potential barrier are uniformly distributed between given limits.
 Publication:

Nuovo Cimento B Serie
 Pub Date:
 October 1974
 DOI:
 10.1007/BF02723642
 Bibcode:
 1974NCimB..23..356S
 Keywords:

 Electromagnetic Noise;
 Electron Capture;
 Noise Spectra;
 Random Noise;
 Semiconductors (Materials);
 Stochastic Processes;
 Electrical Resistivity;
 Power Spectra;
 Semiconductor Devices;
 Thin Films;
 Trapped Particles;
 Electronics and Electrical Engineering