Theory of optical absorption in semiconductors with impurity centers of like charge
Abstract
The coefficient of optical absorption during ionization of like-charged impurity centers is calculated. The effect of an electric field on the absorption of light with quantum energy less than the ionization energy of the trap is also investigated. Results are markedly dependent on electric field orientation and the polarization of the incident light.
- Publication:
-
Moskovskii Universitet Vestnik Seriia Fizika Astronomiia
- Pub Date:
- October 1974
- Bibcode:
- 1974MVSFA..15..520I
- Keywords:
-
- Electromagnetic Absorption;
- Optical Properties;
- Polarization (Charge Separation);
- Semiconductors (Materials);
- Impurities;
- Ionization Potentials;
- Quantum Electrodynamics;
- Solid-State Physics