Influence of intense magnetic field on the current gain of transistors
Abstract
The influence of intense magnetic field on the current gain of transistors has been studied experimentally and the typical results are explained on the basis of the changes in the physical parameters of transistors like diffusion constant and life-time of charge carriers. Various practical applications of the study have been outlined at the end.
- Publication:
-
Journal of the Institution of Electronics and Telecommunication Engineers
- Pub Date:
- July 1974
- Bibcode:
- 1974JIETE..20..353S
- Keywords:
-
- Current Amplifiers;
- Junction Transistors;
- Magnetic Effects;
- Magnetic Fields;
- Transistor Amplifiers;
- Charge Carriers;
- Diffusion Coefficient;
- Electron Diffusion;
- P-N-P Junctions;
- Performance Prediction;
- Electronics and Electrical Engineering